发明授权
- 专利标题: Semiconductor memory device and method for controlling the same
- 专利标题(中): 半导体存储器件及其控制方法
-
申请号: US11327247申请日: 2006-01-05
-
公开(公告)号: US07263026B2公开(公告)日: 2007-08-28
- 发明人: Min-Soo Kim , Myeong-O Kim , Jae-Woong Lee
- 申请人: Min-Soo Kim , Myeong-O Kim , Jae-Woong Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2005-0001092 20050106
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A control unit for a semiconductor memory device, a semiconductor memory device and a method for controlling the same. The control unit of a semiconductor memory device includes control signal circuits, each control signal circuit to receive a master signal and to generate at least one of a plurality of control signals in response to the master signal, each of the plurality of core control signals to be generated after a delay specific to the core control signals after a transition of the master signal, the plurality of control signals to control the semiconductor memory device.
公开/授权文献
信息查询