发明授权
US07259425B2 Tri-gate and gate around MOSFET devices and methods for making same
有权
围绕MOSFET器件的三栅极和栅极及其制造方法
- 专利标题： Tri-gate and gate around MOSFET devices and methods for making same
- 专利标题（中）： 围绕MOSFET器件的三栅极和栅极及其制造方法
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申请号： US10348911申请日： 2003-01-23
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公开(公告)号： US07259425B2公开(公告)日： 2007-08-21
- 发明人: Judy Xilin An , Haihong Wang , Bin Yu
- 申请人： Judy Xilin An , Haihong Wang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder LLP
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gate formed on top of the fin structure. A gate around MOSFET includes multiple fins, a first sidewall gate structure formed adjacent one of the fins, a second sidewall gate structure formed adjacent another one of the fins, a top gate structure formed on one or more of the fins, and a bottom gate structure formed under one or more of the fins.
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