发明授权
- 专利标题: Semiconductor device with intermediate connector
- 专利标题(中): 具有中间连接器的半导体器件
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申请号: US11064282申请日: 2005-02-23
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公开(公告)号: US07247508B2公开(公告)日: 2007-07-24
- 发明人: Hideki Higashitani , Tadashi Nakamura , Daizo Andoh
- 申请人: Hideki Higashitani , Tadashi Nakamura , Daizo Andoh
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: RatnerPrestia
- 优先权: JP2001-127778 20010420
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A semiconductor element and a circuit substrate each having electrodes disposed at narrow pitch are electrically connected with high reliability by conductive paste. A semiconductor device with a semiconductor section and a circuit substrate electrically connected and a method for manufacturing such semiconductor device are provided. The manufacturing method includes processes of: forming semiconductor electrodes at the semiconductor section; forming substrate electrodes at the circuit substrate; firstly affixing one part of the semiconductor section and circuit substrate to an intermediate connector made of insulating material; forming via holes at intermediate connector according to positions of the semiconductor electrodes and positions of the substrate electrodes; electrically connecting each semiconductor electrode and each substrate electrode via each via hole; and secondly affixing the other part of the semiconductor section and circuit substrate to the intermediate connector.
公开/授权文献
- US20050142693A1 Semiconductor device with intermediate connector 公开/授权日:2005-06-30
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