Invention Grant
- Patent Title: Two-bit cell semiconductor memory device
- Patent Title (中): 两位单元半导体存储器件
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Application No.: US10931901Application Date: 2004-09-01
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Publication No.: US07244986B2Publication Date: 2007-07-17
- Inventor: Teiichiro Nishizaka
- Applicant: Teiichiro Nishizaka
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Priority: JP2002-225085 20020801
- Main IPC: H01L29/792
- IPC: H01L29/792

Abstract:
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node 1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node 1 unaffected by the second node.
Public/Granted literature
- US20050029578A1 Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same Public/Granted day:2005-02-10
Information query
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