Invention Grant
- Patent Title: Method for forming metal pattern by using metal nanocrystals
- Patent Title (中): 使用金属纳米晶体形成金属图案的方法
-
Application No.: US11117431Application Date: 2005-04-29
-
Publication No.: US07205096B2Publication Date: 2007-04-17
- Inventor: Jong Jin Park , Sang Yeol Kim , Tae Woo Lee , Lyong Sun Pu
- Applicant: Jong Jin Park , Sang Yeol Kim , Tae Woo Lee , Lyong Sun Pu
- Applicant Address: KR Suwon-Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Gyeonggi-do
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2004-0096321 20041123
- Main IPC: C23C18/30
- IPC: C23C18/30

Abstract:
Disclosed herein is a method for forming a metal pattern by using metal nanocrystals. The method comprises the steps of: (i) coating a photosensitive compound having a substituent, which is converted into a free carboxyl group by light exposure, on a substrate to form a photosensitive film; (ii) selectively exposing the photosensitive film to light in the presence of a photoacid generator to form a latent pattern for crystal growth having a free carboxyl group; and (iii) treating the latent pattern for crystal growth with a nanometallic solution in which metal nanocrystals can be formed to grow the metal nanocrystals on the latent pattern. According to the method, a metal wiring pattern can be formed in a cost-effective and relatively simple manner. Further, the metal pattern formed by the method can be useful in the manufacture of an electromagnetic interference filter for flat panel display devices or an electrode, and can thus be applied to devices, e.g., organic light-emitting devices (OLED) and organic thin-film transistors (OTFT).
Public/Granted literature
- US20060110686A1 Method for forming metal pattern by using metal nanocrystals Public/Granted day:2006-05-25
Information query
IPC分类: