发明授权
US07203091B2 Semiconductor integrated circuit device and non-volatile memory system using the same
有权
半导体集成电路器件和使用其的非易失性存储器系统
- 专利标题： Semiconductor integrated circuit device and non-volatile memory system using the same
- 专利标题（中）： 半导体集成电路器件和使用其的非易失性存储器系统
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申请号： US11097300申请日： 2005-04-04
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公开(公告)号： US07203091B2公开(公告)日： 2007-04-10
- 发明人: Atsushi Inoue , Yoshihisa Sugiura , Tatsuya Tanaka
- 申请人： Atsushi Inoue , Yoshihisa Sugiura , Tatsuya Tanaka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-322496 20041105
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C29/00 ; G11C16/06 ; G06F11/00
摘要：
A semiconductor integrated circuit device includes a non-volatile memory having a pseudo pass function of returning a pass as a status even if a bit error reaching an allowable number of bits occurs after at least one of write or erase sequence is completed. The non-volatile memory includes an issue timing control section for controlling timing of issuing the pseudo pass function.
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