Decreasing metal-silicide oxidation during wafer queue time

Invention Grant

US07160800B2 Decreasing metal-silicide oxidation during wafer queue time 有权

Title translation: 在晶圆排队时间内减少金属硅化物的氧化

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Patent Title: Decreasing metal-silicide oxidation during wafer queue time
Patent Title (中): 在晶圆排队时间内减少金属硅化物的氧化
Application No.: US10905517

Application Date: 2005-01-07
Publication No.: US07160800B2

Publication Date: 2007-01-09
Inventor: Zhen-Cheng Wu , Cheng-Hung Chang , Yu-Lien Huang , Shwang-Ming Cheng
Applicant: Zhen-Cheng Wu , Cheng-Hung Chang , Yu-Lien Huang , Shwang-Ming Cheng
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsinchu
Agency: Baker & McKenzie LLP
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/48

Decreasing metal-silicide oxidation during wafer queue time

Abstract:

Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.

Abstract(Chinese):

这里公开了半导体器件的各种实施例和制造半导体器件的相关方法。在一个实施例中，一种方法包括提供半导体衬底并在半导体衬底上形成金属硅化物。此外，该方法包括用含氢/氮化合物处理金属硅化物的暴露表面以在暴露表面上形成处理层，其中处理层的组成阻碍了暴露表面的氧化。该方法可以进一步包括在经处理的层和金属硅化物的暴露表面上沉积介电层。

Public/Granted literature

US20060154481A1 Decreasing Metal-Silicide Oxidation During Wafer Queue Time Public/Granted day:2006-07-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）