Invention Grant
- Patent Title: Method of forming polysilicon layers in non-volatile memory
- Patent Title (中): 在非易失性存储器中形成多晶硅层的方法
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Application No.: US10870285Application Date: 2004-06-16
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Publication No.: US07160774B2Publication Date: 2007-01-09
- Inventor: Peter Rabkin , Hsingya Arthur Wang , Kai-Cheng Chou
- Applicant: Peter Rabkin , Hsingya Arthur Wang , Kai-Cheng Chou
- Applicant Address: KR Kyoungki-Do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Kyoungki-Do
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In accordance with an embodiment of the present invention, a semiconductor structure includes an undoped polysilicon layer, a doped polysilicon layer in contact with the undoped polysilicon layer, and an insulating layer in contact with the undoped polysilicon layer. The undoped polysilicon layer is sandwiched between the doped polysilicon layer and the insulating layer.
Public/Granted literature
- US20040227179A1 Method of forming polysilicon layers Public/Granted day:2004-11-18
Information query
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