Invention Grant
US07104140B2 High sensitivity, low noise piezoelelctric flexural sensing structure using <011> poled relaxor-based piezoelectric single crystals
有权
使用<011>极化弛豫基压电单晶的高灵敏度，低噪声压电元件弯曲感应结构
- Patent Title: High sensitivity, low noise piezoelelctric flexural sensing structure using <011> poled relaxor-based piezoelectric single crystals
- Patent Title (中): 使用<011>极化弛豫基压电单晶的高灵敏度，低噪声压电元件弯曲感应结构
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Application No.: US11011198Application Date: 2004-12-15
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Publication No.: US07104140B2Publication Date: 2006-09-12
- Inventor: Lichun Zou , Ken Kan Deng
- Applicant: Lichun Zou , Ken Kan Deng
- Applicant Address: US MD Gaithersburg
- Assignee: Wilcoxon Research, Inc.
- Current Assignee: Wilcoxon Research, Inc.
- Current Assignee Address: US MD Gaithersburg
- Agency: Heller Ehrman LLP
- Agent Paul Davis
- Main IPC: G01B7/16
- IPC: G01B7/16
Abstract:
A piezoelectric flexural sensing structure having increased sensitivity and decreased noise, without sacrifice of the sensor bandwidth. The structure is made up of a proof mass, a beam with a base and optionally having castellated bonding surfaces and two poled bonding mode PMN-PT crystal plates mounted on the beam.
Public/Granted literature
- US20050132816A1 High sensitivity, low noise piezoelectric flexural sensing structure Public/Granted day:2005-06-23
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