Invention Grant
- Patent Title: Method for PECVD deposition of selected material films
- Patent Title (中): PECVD沉积所选材料膜的方法
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Application No.: US09825611Application Date: 2001-04-03
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Publication No.: US07093559B2Publication Date: 2006-08-22
- Inventor: Sujit Sharan , Gurtej S. Sandhu
- Applicant: Sujit Sharan , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg, Woessner & Kluth, P.A.
- Main IPC: C23C16/44
- IPC: C23C16/44

Abstract:
A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.
Public/Granted literature
- US20010019889A1 Method for PECVD deposition of selected material films Public/Granted day:2001-09-06
Information query
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