An inventive semiconductor circuit device includes an N-well and a P-well. The N-well is provided with PMIS active areas surrounded by a trench isolation, and the P-well is provided with NMIS active areas surrounded by the trench isolation. The PMIS active areas are each provided with a gate of a P-channel transistor, and the NMIS active areas are each provided with a gate of an N-channel transistor. A layout is designed such that a distance Dpn between the NMIS active areas and the PMIS active areas in a Y-direction substantially becomes a fixed value. Thus, trench isolation stresses applied from the trench isolations to channel regions under the gates become uniform for respective transistors, resulting in an improvement in accuracy of circuit simulation.