发明授权
- 专利标题： Fabrication of nano-scale temperature sensors and heaters
- 专利标题（中）： 制造纳米级温度传感器和加热器
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申请号： US10764242申请日： 2004-01-23
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公开(公告)号： US07009487B1公开(公告)日： 2006-03-07
- 发明人: Lee Chow , Dan Zhou , Fred Stevie
- 申请人： Lee Chow , Dan Zhou , Fred Stevie
- 申请人地址： US FL Orlando
- 专利权人： University of Central Florida Research Foundation, Inc.
- 当前专利权人： University of Central Florida Research Foundation, Inc.
- 当前专利权人地址： US FL Orlando
- 代理机构： Law Offices of Brian S. Steinberger, P.A.
- 代理商 Brian S. Steinberger
- 主分类号： H01C3/04
- IPC分类号： H01C3/04
摘要：
The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga+ ion beam can be used to decompose W(CO)6 molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH3)3Pt in the present case. Because of the Ga+ beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.
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