发明授权
- 专利标题: Semiconductor element and its manufacturing method
- 专利标题(中): 半导体元件及其制造方法
-
申请号: US10625672申请日: 2003-07-24
-
公开(公告)号: US07001460B2公开(公告)日: 2006-02-21
- 发明人: Keishi Saito , Masafumi Sano
- 申请人: Keishi Saito , Masafumi Sano
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP10-065287 19980316; JP10-066854 19980317
- 主分类号: C30B25/14
- IPC分类号: C30B25/14
摘要:
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
公开/授权文献
- US20050173704A1 Semiconductor element and its manufacturing method 公开/授权日:2005-08-11
信息查询
IPC分类: