The invention relates to a process for making a semiconductor color image sensor cell comprising a metal layer in which a fixed contact is defined, an anti-reflecting layer covering the metal layer and a passivation layer covering the assembly. The method includes etching the passivation layer and stopping on the anti-reflecting layer so as to form a hole for the opening of the fixed contact; forming at least one colored filter element on a region of the passivation layer, the anti-reflecting layer then acting as a protection layer for the surface of the fixed contact; depositing a planarizing resin layer so as to cover the colored filter elements; forming micro-lenses on the planarizing resin layer above the colored filter elements; and etching the anti-reflecting layer to open the fixed contact.