Invention Grant
US06944199B2 Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser
有权
具有横向电流传导的半导体激光器和用于制造半导体激光器的方法
- Patent Title: Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser
- Patent Title (中): 具有横向电流传导的半导体激光器和用于制造半导体激光器的方法
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Application No.: US10460823Application Date: 2003-06-12
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Publication No.: US06944199B2Publication Date: 2005-09-13
- Inventor: Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
- Applicant: Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
- Applicant Address: DE Munich
- Assignee: Osram GmbH
- Current Assignee: Osram GmbH
- Current Assignee Address: DE Munich
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: DE10061701 20001212
- Main IPC: H01S5/042
- IPC: H01S5/042 ; H01S5/16 ; H01S5/227 ; H01S5/00
Abstract:
A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
Public/Granted literature
- US20040028102A1 Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser Public/Granted day:2004-02-12
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