Invention Grant
- Patent Title: Shadow mask and method of producing the same
- Patent Title (中): 阴影面具及其制作方法
-
Application No.: US10235166Application Date: 2002-09-05
-
Publication No.: US06893976B2Publication Date: 2005-05-17
- Inventor: Maurice S. Karpman , Swaminathan Rajaraman
- Applicant: Maurice S. Karpman , Swaminathan Rajaraman
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Bromberg & Sunstein LLP
- Main IPC: B81C1/00
- IPC: B81C1/00 ; H01L21/302

Abstract:
A method of producing a shadow mask having a set of apertures (the set of apertures including a given aperture with an aperture boundary) uses a wafer having at least a first silicon layer, a second silicon layer, and an insulator layer between the first and second silicon layers. A first portion of the first silicon layer within the aperture boundary is removed. This produces a second portion of the first silicon layer, which remains within the aperture boundary. The second silicon layer within the aperture boundary is removed, as well as the insulator layer within the aperture boundary. The second portion of the first silicon layer remaining within the aperture boundary then is removed.
Public/Granted literature
- US20040048484A1 Shadow mask and method of producing the same Public/Granted day:2004-03-11
Information query