发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10703745申请日： 2003-11-07
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公开(公告)号： US06887788B2公开(公告)日： 2005-05-03
- 发明人: Jun Hee Cho , Il Wook Kim , Seok Kiu Lee , Tae Hang Ahn , Sung Eon Park
- 申请人： Jun Hee Cho , Il Wook Kim , Seok Kiu Lee , Tae Hang Ahn , Sung Eon Park
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2003-0033772 20030527
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311 ; H01L21/60 ; H01L21/4763
摘要：
Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured. In addition, since the hydrogen plasma processing is performed using a conventional photosensitive film strip apparatus, cost required to install and maintain an additional apparatus is not generated.
公开/授权文献
- US20040241982A1 Method of manufacturing semiconductor device 公开/授权日：2004-12-02
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