发明授权
- 专利标题: Plasma processor apparatus and method, and antenna
- 专利标题(中): 等离子体处理装置和方法以及天线
-
申请号: US10334063申请日: 2002-12-31
-
公开(公告)号: US06876155B2公开(公告)日: 2005-04-05
- 发明人: Arthur M. Howald , Andras Kuthi
- 申请人: Arthur M. Howald , Andras Kuthi
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Lowe Hauptman & Berner, LLP
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J7/24
摘要:
An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.
公开/授权文献
- US20040124779A1 Plasma processor apparatus and method, and antenna 公开/授权日:2004-07-01
信息查询