发明授权
US06858371B2 Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
失效
含有卤素的马来酰亚胺 - 光致抗蚀剂单体，其聚合物和包含其的光致抗蚀剂组合物
- 专利标题： Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
- 专利标题（中）： 含有卤素的马来酰亚胺 - 光致抗蚀剂单体，其聚合物和包含其的光致抗蚀剂组合物
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申请号： US10080335申请日： 2002-02-21
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公开(公告)号： US06858371B2公开(公告)日： 2005-02-22
- 发明人: Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
- 申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR2001-19815 20010413; KR2001-19816 20010413
- 主分类号： G03F7/033
- IPC分类号： G03F7/033 ; C08F210/04 ; C08F220/10 ; C08F222/40 ; C08F232/08 ; G03F7/004 ; G03F7/039 ; H01L21/027 ; C08F26/06
摘要：
Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.
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