发明授权
US06828195B2 Method of manufacturing a trench transistor having a heavy body region
有权
制造具有重体区域的沟槽晶体管的方法
- 专利标题： Method of manufacturing a trench transistor having a heavy body region
- 专利标题（中）： 制造具有重体区域的沟槽晶体管的方法
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申请号： US10347254申请日： 2003-01-17
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公开(公告)号： US06828195B2公开(公告)日： 2004-12-07
- 发明人: Brian Sze-Ki Mo , Duc Chau , Steven Sapp , Izak Bencuya , Dean Edward Probst
- 申请人： Brian Sze-Ki Mo , Duc Chau , Steven Sapp , Izak Bencuya , Dean Edward Probst
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
公开/授权文献
- US20030127688A1 Field effect transistor and method of its manufacture 公开/授权日：2003-07-10
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