发明授权
- 专利标题： Method of etching metallic thin film on thin film resistor
- 专利标题（中）： 在薄膜电阻上蚀刻金属薄膜的方法
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申请号： US09361980申请日： 1999-07-28
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公开(公告)号： US06770564B1公开(公告)日： 2004-08-03
- 发明人: Ichiro Ito , Satoshi Shiraki , Tomio Yamamoto , Makoto Ohkawa , Atsumi Takahashi , Yasuaki Tsuzuki , Akito Fukui , Toshio Sakakibara , Takayuki Sugisaka
- 申请人： Ichiro Ito , Satoshi Shiraki , Tomio Yamamoto , Makoto Ohkawa , Atsumi Takahashi , Yasuaki Tsuzuki , Akito Fukui , Toshio Sakakibara , Takayuki Sugisaka
- 优先权： JP10-214495 19980729; JP10-217725 19980731; JP10-276083 19980929
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
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