Invention Grant
- Patent Title: Nitride semiconductor element with a supporting substrate
- Patent Title (中): 氮化物半导体元件与支撑基板
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Application No.: US10351497Application Date: 2003-01-27
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Publication No.: US06744071B2Publication Date: 2004-06-01
- Inventor: Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- Applicant: Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- Priority: JP2002-019192 20020128; JP2002-175686 20020617; JP2002-195179 20020703; JP2002-233866 20020809; JP2002-356463 20021209
- Main IPC: H01L2715
- IPC: H01L2715

Abstract:
A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
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