Invention Grant
US06744071B2 Nitride semiconductor element with a supporting substrate 有权
氮化物半导体元件与支撑基板

Nitride semiconductor element with a supporting substrate
Abstract:
A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
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