Invention Grant
- Patent Title: Valve control system for atomic layer deposition chamber
- Patent Title (中): 用于原子层沉积室的阀门控制系统
-
Application No.: US09800881Application Date: 2001-03-07
-
Publication No.: US06734020B2Publication Date: 2004-05-11
- Inventor: Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
- Applicant: Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
- Main IPC: G01N3508
- IPC: G01N3508

Abstract:
A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.
Public/Granted literature
- US20020127745A1 Valve control system for atomic layer deposition chamber Public/Granted day:2002-09-12
Information query