The invention includes a semiconductor construction. The construction includes a semiconductive material having a surface and an opening extending through the surface. An electrically insulative liner is along a periphery of the opening. A mass comprising one or more of silicon, germanium, metal, metal silicide and dopant is within a bottom portion of the opening, and only partially fills the opening. The mass has a top surface. An electrically insulative material is within the opening and over the top surface of the mass. The top surface of the mass is at least about 200 Angstroms beneath the surface of the semiconductive material. The invention also includes methods of forming semiconductor constructions.