发明授权
- 专利标题： Silicon-based film, formation method therefor and photovoltaic element
- 专利标题（中）： 硅基薄膜，其形成方法和光电元件
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申请号： US10055974申请日： 2002-01-28
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公开(公告)号： US06706336B2公开(公告)日： 2004-03-16
- 发明人: Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
- 申请人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
- 优先权： JP2001-027553 20010202; JP2001-082822 20010322
- 主分类号： C23C1624
- IPC分类号： C23C1624
摘要：
A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.
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