Invention Grant
US06703669B1 Semiconductor device having serially connected memory cell transistors provided between two current terminals
有权
具有串联连接的存储单元晶体管的半导体器件设置在两个电流端子之间
- Patent Title: Semiconductor device having serially connected memory cell transistors provided between two current terminals
- Patent Title (中): 具有串联连接的存储单元晶体管的半导体器件设置在两个电流端子之间
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Application No.: US09714228Application Date: 2000-11-17
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Publication No.: US06703669B1Publication Date: 2004-03-09
- Inventor: Akira Goda , Kazuhiro Shimizu , Riichiro Shirota , Norihisa Arai , Naoki Koido , Seiichi Aritome , Tohru Maruyama , Hiroaki Hazama , Hirohisa Iizuka
- Applicant: Akira Goda , Kazuhiro Shimizu , Riichiro Shirota , Norihisa Arai , Naoki Koido , Seiichi Aritome , Tohru Maruyama , Hiroaki Hazama , Hirohisa Iizuka
- Priority: JPH11-328149 19991118
- Main IPC: H01L29788
- IPC: H01L29788
Abstract:
A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.
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