发明授权
US06682859B2 Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass 失效
真空紫外线吸收硅氧氟硅光刻玻璃

  • 专利标题: Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass
  • 专利标题(中): 真空紫外线吸收硅氧氟硅光刻玻璃
  • 申请号: US09997785
    申请日: 2001-11-28
  • 公开(公告)号: US06682859B2
    公开(公告)日: 2004-01-27
  • 发明人: Lisa A. MooreCharlene M. Smith
  • 申请人: Lisa A. MooreCharlene M. Smith
  • 主分类号: G03F900
  • IPC分类号: G03F900
Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass
摘要:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content
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