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发明授权
US06642153B1 Method for avoiding unetched polymer residue in anisotropically etched semiconductor features 有权
在各向异性蚀刻的半导体特征中避免未蚀刻的聚合物残留物的方法

  • 专利标题： Method for avoiding unetched polymer residue in anisotropically etched semiconductor features
  • 专利标题（中）： 在各向异性蚀刻的半导体特征中避免未蚀刻的聚合物残留物的方法
  • 申请号： US10209072
    申请日： 2002-07-31
  • 公开(公告)号： US06642153B1
    公开(公告)日： 2003-11-04
  • 发明人: Chih-Fu Chang , Yu-Chun Huang
  • 申请人： Chih-Fu Chang , Yu-Chun Huang
  • 主分类号： H01L214763
  • IPC分类号： H01L214763
Method for avoiding unetched polymer residue in anisotropically etched semiconductor features
摘要：
A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically etched feature opening further including an edge portion defining a diameter of the anisotropically etched feature opening the anisotropically etched feature opening further comprising polymeric material disposed within the anisotropically etched feature opening; plasma treating the at least one opening with an oxygen containing plasma to substantially remove the polymeric material including removing a portion of the edge portion.
摘要（中）：

一种用于等离子体处理各向异性蚀刻的半导体特征的方法，具有改进的残留聚合物材料的去除，包括提供具有各向异性蚀刻的特征开口的半导体晶片，该半导体晶片还包括限定各向异性蚀刻特征的直径的边缘部分，其打开各向异性蚀刻的特征开口， 设置在各向异性蚀刻的特征开口内的材料; 用含氧等离子体等离子体处理至少一个开口以基本上移除聚合物材料，包括去除边缘部分的一部分。

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