发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US10026615申请日: 2001-12-27
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公开(公告)号: US06635913B2公开(公告)日: 2003-10-21
- 发明人: Hiroshi Miki , Keiko Kushida , Yasuhiro Shimamoto , Shinichiro Takatani , Yoshihisa Fujisaki , Hiromi Nakai
- 申请人: Hiroshi Miki , Keiko Kushida , Yasuhiro Shimamoto , Shinichiro Takatani , Yoshihisa Fujisaki , Hiromi Nakai
- 优先权: JP9-003571 19970113
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
公开/授权文献
- US20020056862A1 Semiconductor storage device 公开/授权日:2002-05-16
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