- 专利标题: Resist composition and patterning process
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申请号: US09832919申请日: 2001-04-12
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公开(公告)号: US06605408B2公开(公告)日: 2003-08-12
- 发明人: Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
- 申请人: Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
- 优先权: JP2000-111545 20000413; JP2000-330181 20001030
- 主分类号: C08F200
- IPC分类号: C08F200
摘要:
A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
公开/授权文献
- US20020001772A1 Resist composition and patterning process 公开/授权日:2002-01-03
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