发明授权
US06537905B1 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
失效
使用铜线互连和选择性CVD铝插头的全平面化双镶嵌金属化
- 专利标题： Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
- 专利标题（中）： 使用铜线互连和选择性CVD铝插头的全平面化双镶嵌金属化
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申请号： US08778205申请日： 1996-12-30
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公开(公告)号： US06537905B1公开(公告)日： 2003-03-25
- 发明人: Liang-Yuh Chen , Ted Guo , Roderick Craig Mosley , Fusen Chen
- 申请人： Liang-Yuh Chen , Ted Guo , Roderick Craig Mosley , Fusen Chen
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD Al) via fill with a metal wire, preferably copper, formed within a barrier layer. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.
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