发明授权
US06515892B1 Semiconductor integrated circuit device 失效
半导体集成电路器件

  • 专利标题: Semiconductor integrated circuit device
  • 专利标题(中): 半导体集成电路器件
  • 申请号: US09959906
    申请日: 2001-11-13
  • 公开(公告)号: US06515892B1
    公开(公告)日: 2003-02-04
  • 发明人: Kiyoo ItohKazuo Nakazato
  • 申请人: Kiyoo ItohKazuo Nakazato
  • 主分类号: G11C1124
  • IPC分类号: G11C1124
Semiconductor integrated circuit device
摘要:
A semiconductor integrated circuit device utilizing a memory cell containing a transistor to write information and a storage MOSFET to retain an information voltage in the gate, a word line placed to intersect with a write data line and a read data line, for connecting to the control terminal of the write transistor and a memory cell array for issuing an output on the read data line corresponding to the read signal from said memory cell in response to a select signal from said write transistor and by means of a data select circuit select one from among said plurality of read data lines from the data line select circuit and connect to either a first or second common data line, precharge said read data line to a first voltage within a first period, discharge said read data line to a second voltage by means of a second storage MOSFET of said memory cell set to on status for said word line selected within the second period, precharge said first and second common data lines to a third voltage between said first and said second voltages within said first period and, amplify the read signal appearing on either of the common data lines from the read data line selected by said data line select circuit within said second period by using the precharge voltage on said other common data line as a reference voltage.
信息查询
0/0