发明授权
- 专利标题： Method of manufacturing semiconductor devices with titanium aluminum nitride work function
- 专利标题（中）： 制造具有钛氮化铝功能的半导体器件的方法
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申请号： US10033509申请日： 2001-12-27
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公开(公告)号： US06506676B2公开(公告)日： 2003-01-14
- 发明人: Dae Gyu Park , Tae Ho Cha , Se Aug Jang , Heung Jae Cho , Tae Kyun Kim , Kwan Yong Lim , In Seok Yeo , Jin Won Park
- 申请人： Dae Gyu Park , Tae Ho Cha , Se Aug Jang , Heung Jae Cho , Tae Kyun Kim , Kwan Yong Lim , In Seok Yeo , Jin Won Park
- 优先权： KR2000-0085449 20001229
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method of manufacturing semiconductor devices forms a surface channel CMOSFET in the process of manufacturing a metal gate. The method forms a (TixAly)1-zNz film (where z ranges from about 0.0 to about 0.2) having a work function value ranging from about 4.2 to about 4.3 eV on a gate insulating film in a nMOS region, a (TixAly)1-zNz film (where z ranges from about 0.3 to about 0.6) having a work function value ranging from about 4.8 to about 5.0 eV on the gate insulating film in a pMOS region, thus implementing a surface channel CMOS device both in the nMOS region and the pMOS region. Therefore, the threshold voltage is reduced.
公开/授权文献
- US20020086504A1 Method of manufacturing semiconductor devices 公开/授权日：2002-07-04
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