发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US09017702申请日: 1998-02-05
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公开(公告)号: US06460110B2公开(公告)日: 2002-10-01
- 发明人: Hiroyoshi Tomita
- 申请人: Hiroyoshi Tomita
- 优先权: JP9-226140 19970822
- 主分类号: G06F1200
- IPC分类号: G06F1200
摘要:
The present invention relates to a semiconductor memory having a pre-fetch structure. In such memory, an odd address cell array is provided with an odd address redundant cell array, and an even address cell array is provided with an even address redundant cell array, firstly, the present invention comprises a redundant memory, which stores an odd redundant address and an even redundant address, together with odd and even selection data. Since redundant memory is used flexibly on the odd side and even side, it is possible to maintain a high relief probability even when redundant memory capacity is reduced.
公开/授权文献
- US20010042161A1 SEMICONDUCTOR REDUNDANT MEMORY PROVIDED IN COMMON 公开/授权日:2001-11-15
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