发明授权
- 专利标题: Carbon layer forming method
- 专利标题(中): 碳层成型方法
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申请号: US09534568申请日: 2000-03-27
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公开(公告)号: US06316054B1公开(公告)日: 2001-11-13
- 发明人: Makoto Kashiwaya , Junji Nakada
- 申请人: Makoto Kashiwaya , Junji Nakada
- 优先权: JP11-082024 19990325
- 主分类号: C23C1600
- IPC分类号: C23C1600
摘要:
The method of forming a carbon layer by vapor phase deposition starts a film deposition process of the carbon layer after a surface to be coated with the carbon layer is heated while adjusting a partial pressure of moisture in a film deposition system of the carbon layer to 5×10−6 Torr or less. This carbon layer forming method by means of a vapor phase deposition technique such as sputtering ensures that a high-quality carbon layer having high adhesion to the lower layer and significantly reduced pinholes or cracks is obtained.
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