发明授权
US06316054B1 Carbon layer forming method 有权
碳层成型方法

  • 专利标题: Carbon layer forming method
  • 专利标题(中): 碳层成型方法
  • 申请号: US09534568
    申请日: 2000-03-27
  • 公开(公告)号: US06316054B1
    公开(公告)日: 2001-11-13
  • 发明人: Makoto KashiwayaJunji Nakada
  • 申请人: Makoto KashiwayaJunji Nakada
  • 优先权: JP11-082024 19990325
  • 主分类号: C23C1600
  • IPC分类号: C23C1600
Carbon layer forming method
摘要:
The method of forming a carbon layer by vapor phase deposition starts a film deposition process of the carbon layer after a surface to be coated with the carbon layer is heated while adjusting a partial pressure of moisture in a film deposition system of the carbon layer to 5×10−6 Torr or less. This carbon layer forming method by means of a vapor phase deposition technique such as sputtering ensures that a high-quality carbon layer having high adhesion to the lower layer and significantly reduced pinholes or cracks is obtained.
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