A semiconductor device of the type having an integrated circuit with connection terminals connected to metal pads by connecting wires is provided. The integrated circuit includes a substrate-on-insulator type semiconductor substrate having a lower portion on top of which there is an upper insulating layer. A first semiconductor block and a second semiconductor block are produced in the upper insulating layer, and decoupling means are arranged in the upper insulating layer between the first and second semiconductor blocks. The first semiconductor block defines a first capacitor with the lower portion of the substrate, the second semiconductor block defines a second capacitor with the lower portion of the substrate, and the decoupling means includes at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate. The capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors. Also provided is a method of providing noise decoupling in an integrated circuit having a substrate-on-insulator type semiconductor substrate with a lower portion on top of which there is an upper insulating layer.