Invention Grant
- Patent Title: Laser marking method for semiconductor wafer
- Patent Title (中): 半导体晶圆激光打标法
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Application No.: US09266264Application Date: 1999-03-11
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Publication No.: US06248973B1Publication Date: 2001-06-19
- Inventor: Yukinori Matsumura , Yukihiko Sugimoto , Kotaro Hori
- Applicant: Yukinori Matsumura , Yukihiko Sugimoto , Kotaro Hori
- Priority: JP10-059890 19980311
- Main IPC: B23K2600
- IPC: B23K2600

Abstract:
In a laser marking method for making a dot mark on a semiconductor wafer by using laser beam, molten splashes which arise at the laser marking are prevented from adhering to a surface of the wafer and a shape of the dot mark is kept in a stable posture with its visibility being ensured even after the marking made throughout various and multistage steps in a manufacturing process by the semiconductor apparatus. The method comprises forming a transparent thin film on at least a dot mark-formation area of a semiconductor wafer body of the wafer; irradiating the dot mark-formation area with laser beam having a wavelength selected in advance, on the transparent thin film; melting and deforming the wafer body by the laser beam transmitting the transparent thin film to form a dot mark; and by utilizing the heat generated when the wafer body is melted, deforming the transparent thin film, along with the deformation of the dot mark, into the same shape as the dot mark without a breakdown of the transparent thin films.
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