Invention Grant
US06221154B1 Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
有权
生长β-碳化硅纳米棒的方法，以及通过化学气相沉积（CVD）制备图案化场致发射体
- Patent Title: Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
- Patent Title (中): 生长β-碳化硅纳米棒的方法，以及通过化学气相沉积（CVD）制备图案化场致发射体
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Application No.: US09252568Application Date: 1999-02-18
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Publication No.: US06221154B1Publication Date: 2001-04-24
- Inventor: Shuit-tong Lee , Chun-Sing Lee , Ning Wang , Igor Bello , Carol Hau Ling Lai , Xing Tai Zhou , Frederick Chi Kan Au
- Applicant: Shuit-tong Lee , Chun-Sing Lee , Ning Wang , Igor Bello , Carol Hau Ling Lai , Xing Tai Zhou , Frederick Chi Kan Au
- Main IPC: C30B2962
- IPC: C30B2962
Abstract:
A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.
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