发明授权
US06219275B1 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
有权
磁性薄膜元件，使用其的存储元件以及使用存储元件的记录和再现方法
- 专利标题： Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
- 专利标题（中）： 磁性薄膜元件，使用其的存储元件以及使用存储元件的记录和再现方法
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申请号： US09236356申请日： 1999-01-25
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公开(公告)号： US06219275B1公开(公告)日： 2001-04-17
- 发明人: Naoki Nishimura
- 申请人： Naoki Nishimura
- 优先权： JP10-015633 19980128
- 主分类号： G11C1115
- IPC分类号： G11C1115
摘要：
A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.
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