The present invention relates to methods for pulling a single crystal wherein the induction of dislocation can be inhibited and a single crystal can be held safely. An apparatus for pulling a single crystal having a straightening vane in the shape of an inverted truncated cone whose upper and lower planes are removed, which is located between a crucible and a single crystal, is used. The gap between the lower end portion of the straightening vane and the surface of a melt filled into the crucible can be selected in the range of 30-200 mm. Where the gap is set large in the range of 30-200 mm, the temperature of the front portion of a seed crystal is raised till the difference in temperature between the front portion thereof and the melt (the range of 1380-1480° C.) becomes almost zero. The seed crystal is brought into contact with the melt, a neck is formed with being heated, and a main body is pulled from the melt. Alternatively, an apparatus for pulling a single crystal having a crucible with through holes formed on the upper part thereof, or an apparatus for pulling a single crystal having an auxiliary heating means which has a body surrounding a seed crystal located near above the melt surface and a transfer mechanism for pulling the body is used in order to achieve the object.