Invention Grant
US06207987B1 Semiconductor device having smooth surface for suppressing layer displacement
失效
具有用于抑制层位移的光滑表面的半导体器件
- Patent Title: Semiconductor device having smooth surface for suppressing layer displacement
- Patent Title (中): 具有用于抑制层位移的光滑表面的半导体器件
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Application No.: US09198363Application Date: 1998-11-24
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Publication No.: US06207987B1Publication Date: 2001-03-27
- Inventor: Isao Tottori
- Applicant: Isao Tottori
- Priority: JP10-154384 19980603
- Main IPC: H07L27108
- IPC: H07L27108
Abstract:
On a silicon oxide film covering a gate electrode portion, a reflowed and polished BPSG film is formed. A second interconnection layer is formed on the BPSG film. To cover the second interconnection layer, a silicon oxide film having a thickness of at least the substantial thickness of the second interconnection layer is formed on a silicon oxide film. Thus, the planarity of the base of the interconnection layer is ensured and displacement of the interconnection layer is suppressed. Accordingly, a semiconductor device having a high degree of integration is obtained.
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