Invention Grant
- Patent Title: Method to evaluate hemisperical grain (HSG) polysilicon surface
- Patent Title (中): 评估半晶粒(HSG)多晶硅表面的方法
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Application No.: US09324925Application Date: 1999-06-04
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Publication No.: US06194234B1Publication Date: 2001-02-27
- Inventor: Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Yu-Hua Lee
- Applicant: Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Yu-Hua Lee
- Main IPC: G01R3126
- IPC: G01R3126

Abstract:
A new method based on measuring the weight of a wafer (on which the layer of HSG has been deposited) before (W1) and after (W2) the surface of the HSG layer is coated with a layer of either photoresist or SOG. The difference delta W=W2−W1 provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG. This new method can also be based on measuring the weight W of rejected or dropped PR or SOG after the surface of the HSG layer has been coated with a layer of either photoresist or SOG. The weight of the rejected or dropped PR or SOG also provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG.
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