发明授权
- 专利标题: Integrated weak write test mode (WWWTM)
- 专利标题(中): 集成弱写测试模式(WWWTM)
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申请号: US09510287申请日: 2000-02-21
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公开(公告)号: US06192001B1公开(公告)日: 2001-02-20
- 发明人: Donald R Weiss , John Wuu , Reid James Riedlinger
- 申请人: Donald R Weiss , John Wuu , Reid James Riedlinger
- 主分类号: G11C810
- IPC分类号: G11C810
摘要:
The present invention integrates a WWTM circuit with the write driver circuitry, which is an inherent part of any conventional SRAM design. Thus, a circuit for writing data into and weak write testing a memory cell is provided. In one embodiment, the circuit comprises a write driver that has an output for applying a write or a weak write output signal at the memory cell. The write driver has first and second selectable operating modes. In the first mode, the write driver is set to apply a weak write output signal from the output for performing a weak write test on the cell. In the second mode, the write driver is set to apply a normal write output signal that is sufficiently strong for writing a data value into the cell when it is healthy.
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