An SRAM cell having a word line shorter than a bit line is provided. First and second driver transistors having first and second gate electrodes parallel to each other are formed on a semiconductor substrate, and a third gate electrode shared by first and second transfer transistors is formed between the first and the second gate electrodes. A word line electrically connected to the third electrode is perpendicular to the first and the second gate electrodes, and a pair of bit lines electrically connected to drain areas of the first and the second transfer transistors are perpendicular to the word line. Also, a pair of ground lines are electrically connected to the source areas of the first and the second driver transistors, and are parallel to the bit lines.