Invention Grant
- Patent Title: Control circuit for hall-effect switching device
- Patent Title (中): 霍尔效应开关装置的控制电路
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Application No.: US124820Application Date: 1998-07-29
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Publication No.: US6066966APublication Date: 2000-05-23
- Inventor: Kuei Wei Kuo
- Applicant: Kuei Wei Kuo
- Applicant Address: TWX Hsinchu
- Assignee: Analog and Power Electronics Corp.
- Current Assignee: Analog and Power Electronics Corp.
- Current Assignee Address: TWX Hsinchu
- Priority: TWX87106847 19980504
- Main IPC: H03K17/94
- IPC: H03K17/94 ; H03K17/95 ; G01R19/00
Abstract:
A control circuit for Hall-effect switching device is provided. The control circuit can be used in a Hall-effect switching device to control the output of the Hall-effect switching device in response to Hall effect. The control circuit comprises a current source and two pairs of symmetrically arranged bipolar junction transistors (BJT). The particular arrangement of the BJTs allow the Hall-effect sensitivity by the Hall-effect switching device to be enhanced. The Hall-effect sensitivity can be adjusted by varying the current source in the control circuit. Moreover, the control circuit is designed with a double-output feature that allows the Hall-effect switching device to be realizable with a fewer number of transistors, allowing the Hall-effect switching device to operate with a lower working current and a lower starting voltage as compared to the prior art, thus considerably reducing power consumption.
Public/Granted literature
- US4873344A Cyano containing indene derivatives Public/Granted day:1989-10-10
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