Invention Grant
- Patent Title: Semiconductor memory device having a refresh-cycle program circuit
- Patent Title (中): 具有刷新循环程序电路的半导体存储器件
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Application No.: US676963Application Date: 1996-07-08
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Publication No.: US5970507APublication Date: 1999-10-19
- Inventor: Tetsuo Kato , Kiyohiro Furutani , Hideto Hidaka , Mikio Asakura
- Applicant: Tetsuo Kato , Kiyohiro Furutani , Hideto Hidaka , Mikio Asakura
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX7-323076 19951212
- Main IPC: G11C11/403
- IPC: G11C11/403 ; G11C11/406 ; G11C11/409 ; G06F12/00
Abstract:
In a semiconductor memory device, a self refresh cycle program circuit is provided and a refresh operation is conducted in accordance with one of the refresh cycles programmed in the refresh-cycle program circuit. The refresh cycle of the self-refresh mode is selected from a plurality of refresh-cycle types. A plurality of refresh modes allows a refresh cycle to be selected from a plurality of refresh-cycle types in accordance with a selected refresh mode.
Public/Granted literature
- US5223759A DC brushless motor with solid rotor having permanent magnet Public/Granted day:1993-06-29
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