发明授权
- 专利标题： High speed gate oxide protected level shifter
- 专利标题（中）： 高速栅极氧化物保护电平转换器
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申请号： US861038申请日： 1997-05-21
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公开(公告)号： US5969542A公开(公告)日： 1999-10-19
- 发明人: Reading Maley , Albrecht Schoy
- 申请人： Reading Maley , Albrecht Schoy
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H03K3/012
- IPC分类号： H03K3/012 ; H03K3/356 ; H03K17/10 ; H03K19/0185 ; H03K19/017
摘要：
An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.
公开/授权文献
- US4988017A Dual chamber aerosol container 公开/授权日：1991-01-29
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