发明授权
- 专利标题： Dielectric pattern
- 专利标题（中）： 电介质图案
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申请号： US59691申请日： 1998-04-14
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公开(公告)号： US5959361A公开(公告)日： 1999-09-28
- 发明人: Yimin Huang , Tri-Rung Yew
- 申请人： Yimin Huang , Tri-Rung Yew
- 申请人地址： TWX Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsin-Chu
- 优先权： TWX86118145 19971203
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L51/00 ; H01L21/321
摘要：
A dielectric pattern. On a substrate having a metal wiring layer formed thereon, a first dielectric layer and a first masking layer are formed. A cap insulation layer is formed on the masking layer. The first dielectric layer, the first masking layer and the cap insulation layer are penetrated through by a first opening. A second dielectric layer and a second masking layer are formed on the cap insulation layer. The second dielectric layer and the second masking layer are penetrated through by a second opening. The first and the second openings are contiguous without intermittence.
公开/授权文献
- USD388767S Fiber optic connector 公开/授权日：1998-01-06
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