发明授权
- 专利标题: Method for burn-in operation on a wafer of memory devices
- 专利标题(中): 用于存储器件晶片上的老化操作的方法
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申请号: US32401申请日: 1998-02-27
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公开(公告)号: US5946248A公开(公告)日: 1999-08-31
- 发明人: Pien Chien , Shih-Chin Lin , Charlie Han
- 申请人: Pien Chien , Shih-Chin Lin , Charlie Han
- 申请人地址: TWX Taipei
- 专利权人: United Microelectronics, Corp.
- 当前专利权人: United Microelectronics, Corp.
- 当前专利权人地址: TWX Taipei
- 优先权: TWX86117513 19971122
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G11C29/50 ; G11C13/00
摘要:
A method is provided for use on a wafer formed with a plurality of dice on each of which a memory device, such as a DRAM (dynamic random access memory) device to perform a burn-in operation on the memory device so as to test the reliability thereof. By this method, a plurality of pads are formed in the scribe lines that are used as reference marks in the cutting apart of the dice. These pads are used to transfer an externally generated burn-in enable signal and a DC bias voltage to each memory device. Since the pads for burn-in wiring are formed in the scribe lines, they will not take additional space on the dice where each memory device is formed. The burn-in operation is more convenient, quick, and cost-effective to implement.
公开/授权文献
- USD363393S Armoire 公开/授权日:1995-10-24
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