发明授权
- 专利标题： Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding
- 专利标题（中）： 使用牺牲层晶片接合制造单晶硅结构
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申请号： US656624申请日： 1996-05-31
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公开(公告)号： US5882532A公开(公告)日： 1999-03-16
- 发明人: Leslie A. Field , Paul P. Merchant
- 申请人： Leslie A. Field , Paul P. Merchant
- 申请人地址： CA Palo Alto
- 专利权人： Hewlett-Packard Company
- 当前专利权人： Hewlett-Packard Company
- 当前专利权人地址： CA Palo Alto
- 主分类号： B81B3/00
- IPC分类号： B81B3/00 ; B81C1/00 ; B81C99/00 ; H01L21/00
摘要：
A thin micromechanical device is fabricated in a way that is mechanically compatible with wafer handling for conventional-thickness wafers. A removable bonding layer bonds a fabrication wafer to a substantially conventional-thickness handle wafer to form a bonded wafer pair. The micromechanical device is formed in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers. The micromechanical device is formed to include part of the fabrication wafer. Finally, the bonding layer underlying the micromechanical device is removed to release the micromechanical device from the handle wafer.
公开/授权文献
- US4588002A Hot melt adhesive applicator system 公开/授权日：1986-05-13
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